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  Datasheet File OCR Text:
 HiPerFASTTM IGBT
IXGH 40N60B IXGT 40N60B
VCES IC25 VCE(sat) tfi
= 600 V = 75 A = 2.1 V = 180 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM I C25 I C110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25C
Maximum Ratings 600 600 20 30 75 40 150 ICM = 80 @ 0.8 VCES 250 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
TO-247 AD (IXGH)
C (TAB) G C E
TO-268 (D3) (IXGT)
G E (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-247 SMD
1.13/10Nm/lb.in. 6 4 g g
Features l International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD l High current handling capability l Latest generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switched-mode and resonant-mode power supplies Advantages l Space savings (two devices in one package) l High power density l Suitable for surface mounting l Switching speed for high frequency applications l Easy to mount with 1 screw,TO-247 (isolated mounting screw hole)
98799 (01/01)
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 0.072 -0.286 5 200 1 100 1.6 2.1 V %/K V %/K mA mA nA V
BVCES VGE(th) I CES I GES VCE(sat)
IC = 250 mA, VGE = 0 V BVCES temperature coefficient IC = 250 mA, VCE = VGE VGE(th) temperature coefficient VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC110, VGE = 15 V TJ = 25C TJ = 150C
(c) 2001 IXYS All rights reserved
IXGH40N60B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 42 3300 VCE = 25 V, VGE = 0 V, f = 1 MHz 310 65 116 I C = IC110, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C I C = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125C I C = IC110, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 23 55 25 30 180 180 2.7 25 35 0.4 300 270 4.0 300 270 S
IXGT40N60B
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC110; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
AEP
pF pF pF nC nC nC ns ns ns ns
e
Dim.
4.0 mJ ns ns mJ ns ns mJ 0.50 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(IXGH40N60B)
0.25
K/W
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025


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